Enhanced ferromagnetic properties of Cu doped two-dimensional GaN monolayer

We demonstrate enhanced ferromagnetism in copper doped two-dimensional GaN monolayer (GaN-ML). Our first principle calculation based on density functional theory predicted that nonmagnetic Cu-dopant with concentration of 6.25% to be ferromagnetic (FM) in 2D GaN layer which carries a magnetic moment of 2.0 mu(B) per Cu atom and it is found to be long range magnetic coupling among the Cu-dopant. The Cu-dopant in 2D GaN-ML which can be explained in terms of p-d hybridization at Curie temperature and this dopant prefer the FM behavior in 2D GaN layer. Hence Cu doped 2D GaN layer shows strong magnetic properties so that it is a promising material in the field of spintronics.