期刊
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 51, 期 2, 页码 664-668出版社
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.51.664
关键词
cr-doped SrTiO3; MIM structure; resistance switching; tap-controlled space-charge-limited; current mechanism
资金
- Korea Institute of Industrial Technology(KITECH) [10029907] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [R0A-2004-000-10364-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Current-voltage (I-V) characteristics of 0.2 % Cr-doped SrTiO3 (Cr-STO) thin film in a metal-insulator-metal (MIM), i.e., Pt/Cr-STO/La0.5Sr0.5CoO3, structure were measured, and the electrical conduction was investigated. The I-V characteristics exhibited hysteretic and asymmetric behaviors. The hysteretic behavior is attributed to bistable resistive switching between a high-resistance state (HRS) and a low-resistance state (LRS) with voltage polarity. The voltages that induced the resistance switching were above +/-3 V. The resistance ratio between the two conduction states was about two orders of magnitude. An analysis of the I-V characteristics revealed that the electrical conduction behavior followed a trap-controlled space-charge-limited current. The trap-filled limit voltage, V-TFL, was -1.6 V.
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