期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 54, 期 4, 页码 1115-1119出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2007.894180
关键词
fiber; infrared; pure and doped silica; radiation
Exposing optical silica fibers to radiative environments leads to an increase of fiber attenuation. This gamma-sensitivity of the fibers is strongly wavelength dependent. Many papers already mentioned the strong Radiation-Induced Attenuation (RIA) in the UV and Visible ranges, which is explained by radiation-induced defects absorbing in these spectral ranges. However, the origin of RIA at longer wavelengths (lambda > 1000 nm) is less clear. An exception is phosphorous-doped fibers for which P1 defects absorbing around 1700 nm have already been highlighted. For fibers with no phosphorus, the RIA at Near-InfraRed (NIR) wavelengths is usually assumed to be small as it results from the UV-visible absorption tail, which decreases with increasing wavelength. In this paper, we study three prototype silica based optical fibers and show that the RIA does not monotically decrease with increasing wavelength, highlighting RIA-contributions having their origins at NIR-wavelengths. We show that these NIR-absorbing defects are generally the main contributor to RIA at telecommunication wavelengths (1310 nm and 1550 nm), the impact of UV-visible absorption tail being secondary only. The nature of defects involved in these NIR absorptions depends on fiber composition. For fibers with no phosphorous, we propose Self Trapped Hole defects (STH) as origin.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据