期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 46, 期 29-32, 页码 L770-L772出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.46.L770
关键词
silicon carbide (SiC); (0001) C-face; oxidation; in-situ ellipsometry; Deal-Grove model; Massoud empirical equation
The thermal oxidation of silicon carbide (SiC) has been studied by performing in-situ ellipsometry. We have found that the oxidation rates at the oxidation thickness of approximately less than around 20 nm are much larger than those given using the Deal-Grove (D-G) model, suggesting that the oxidation time dependence of the oxide thickness cannot be explained using the D-G model, i.e., a simple linear-parabolic model, in the initial oxidation stage. By using the empirical relation, which has been proposed for Si oxidation, i.e., adding an exponential term to the D-G equation, the origin of the growth rate enhancement in SiC oxidation has been discussed.
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