期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 54, 期 4, 页码 821-827出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2007.894555
关键词
CdZnTe; semiconductor detectors; Te inclusions
We studied the effects of small, < 20 mu m, Te inclusions on the energy resolution of CdZnTe gamma-ray detectors using a highly collimated X-ray beam and gamma-rays, and modeled them via a simplified geometrical approach. Previous reports demonstrated that Te inclusions of about a few microns in diameter degraded the charge-transport properties and uniformity of CdZnTe detectors. The goal of this work was to understand the extent to which randomly distributed Te-rich inclusions affect the energy resolution of CZT detectors, and to define new steps to overcome their deleterious effects. We used a phenomenological model, which depends on several adjustable parameters, to reproduce the experimentally measured effects of inclusions on energy resolution. We also were able to bound the materials-related problem and predict the enhancement in performance expected by reducing the size and number of Te inclusions within the crystals.
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