4.6 Article

Ion-beam-induced phase separation in GeOx thin films

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JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 40, 期 15, 页码 4568-4570

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IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/40/15/029

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Irradiation of thin films of sub stoichiometric germanium oxide (GeOx) has been carried out using swift heavy ions. Micro-Raman studies of the films indicate the formation of Ge crystallites as a result of irradiation. Moreover, crystallinity of Ge improves with an increase in fluence. Glancing angle x-ray diffraction results also confirm the presence of Ge crystallites in the irradiated samples. Fourier transformed infrared spectroscopy was employed to study the Ge-O-Ge vibrational structure before and after irradiation. Formation of Ge crystallites has been explained on the basis of the phenomenon of ion-beam-induced phase separation.

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