4.6 Article

Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors

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JOURNAL OF APPLIED PHYSICS
卷 102, 期 4, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2769782

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We report on a strong field-dependent mobility in organic field-effect transistors fabricated by using poly(2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. Charge transport and mobilities in devices annealed in the mesophase show a more pronounced dependence on channel length as compared with as-cast devices. Analysis reveals that the contact effects in both sets of devices are negligible from room temperature down to approximate to 100 K. We show that this field dependence is consistent with a Poole-Frenkel model of mobility. Finally, the nonlinear transport data for short channel devices are modeled consistently in the Poole-Frenkel framework over a broad temperature range. (C) 2007 American Institute of Physics.

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