期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 440, 期 1-2, 页码 254-258出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2006.09.006
关键词
copper nitride; surface morphology; electrical resistivity; optical band gap
Pure and Ti-doped copper nitride films were prepared by cylindrical magnetron sputtering on glass substrates at room temperature. The preferred orientation for copper nitride films changes from [111] for undoped film to [100] for Ti-doped films. The variation of surface morphology correlates to that of preferred orientation resulting from the variation of Ti-doped content. The electrical resistivity and optical band gap increases as the Ti-doped content increases. (c) 2006 Elsevier B.V. All rights reserved.
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