Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films

The orientation growth and angle-dependent photoluminescence (PL) of nitrogen-doped SnO2 films grown on Si substrate by reactive magnetron sputtering have been studied. It was found that the orientation of the nitrogen-doped SnO2 films depends strongly on their thickness, and a highly [110]-oriented film was achieved with a seed layer. An angle-dependent PL of the [110]-oriented films was observed, and the PL peak position shifts towards the longer wavelength side and the PL peak width decreases as the observation angle decreases. This angle-dependent PL was attributed to the Fabry-Perot optical interference effect.