期刊
PHYSICAL REVIEW LETTERS
卷 99, 期 8, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.99.086805
关键词
-
The calculated Schottky barrier heights of polar and nonpolar interfaces of many metals on HfO2 high dielectric constant gate oxide have been found to vary strongly with the metal work function and also with oxide termination, with relatively little Fermi level pinning. This indicates that the choice of metal gate materials will not limit the continued scaling of metal-oxide semiconductor devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据