Control of schottky barrier heights on high-k gate dielectrics for future complementary metal-oxide semiconductor devices

The calculated Schottky barrier heights of polar and nonpolar interfaces of many metals on HfO2 high dielectric constant gate oxide have been found to vary strongly with the metal work function and also with oxide termination, with relatively little Fermi level pinning. This indicates that the choice of metal gate materials will not limit the continued scaling of metal-oxide semiconductor devices.