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Ionized impurity scattering in n-doped C60 thin films

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APPLIED PHYSICS LETTERS
卷 91, 期 9, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2776355

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Carrier transport in organic films is usually dominated by hopping process, leading to different temperature dependence from that of inorganic crystals. The aurhors demonstrate that n-doped C-60 films show temperature dependence analogous to inorganic semiconductors. At low temperatures, the conductivity increases with temperature, around room temperature, a maximum is reached and then the conductivity decreases. These observations are confirmed by the dependence of mobility on doping level. In contrast to previous reports for organic thin films, the C-60 films show a decrease of mobility with increasing doping levels, i.e., they follow the well-known Matthiessen rule which is generally observed in inorganic semiconductors.

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