A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals

A homojunction of single- crystalline beta-Ga2O3 nanowires and nanocrystals was realized. Ga2O3 nanowires were synthesized at about 850 - 950 degrees C using a mixture of Ga2O3 and graphite powder with vapor phase epitaxy. It was found that the beta-Ga2O3 nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of beta-Ga2O3 nanocrystals follows the growth direction of the main beta-Ga2O3 nanowires. The distance between neighboring atoms in beta-Ga2O3 nanowires was 0.522 nm, which is similar to the theoretical value for bulk beta-Ga2O3.