Room temperature InGaSb quantum well microcylinder lasers at 2 μm grown monolithically on a silicon substrate

Fabrication of microcylinder laser cavities in III-Sb material on a silicon substrate is reported. Room temperature lasing near 2 mu m wavelength under optical pumping conditions is demonstrated in the microcylinders with InGaSb quantum wells. The III-Sb material is grown monolithically on a silicon substrate. High quality epitaxy is enabled by an interfacial misfit array. (C) 2007 American Vacuum Society.