4.6 Article

Theory of a magnetically controlled quantum-dot spin transistor

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PHYSICAL REVIEW B
卷 76, 期 12, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.76.125306

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We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise nonmagnetic quantum dot. This spin accumulation leads to magnetoresistance. A ferromagnetic but current-free base electrode influences the quantum-dot spin via incoherent spin-flip processes and coherent spin precession. As the dot spin determines the conductance of the device, this allows for a purely magnetic transistorlike operation. We analyze the effect of both types of processes on the electric current in different geometries.

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