期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 46, 期 33-35, 页码 L833-L835出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.46.L833
关键词
solar cell; silicon quantum dots; superlattice; silicon carbide; quantum size effect; photoluminescence
We prepared size-controlled silicon quantum dots superlattices (Si-QDSLs) by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon-rich hydrogenated amorphous silicon carbide (a-Si1+xC:H) multilayers. Transmission electron microscope (TEM) observation revealed that silicon quantum dots were formed, in only a-Si1+xC:H layers. The size of silicon quantum dots can be controlled by the thickness of the a-Si1+xC:H layers. It was found that hydrogen plasma treatment (HPT) significantly enhanced the photoluminescence of the Si-QDSLs. The luminescence peaks shifted to shorter wavelength with decreasing the diameter of the silicon quantum dots in the Si-QDSL.
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