4.4 Article

Defect structure of oxide ferroelectrics - valence state, site of incorporation, mechanisms of charge compensation and internal bias fields

期刊

JOURNAL OF ELECTROCERAMICS
卷 19, 期 1, 页码 9-21

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SPRINGER
DOI: 10.1007/s10832-007-9068-8

关键词

ferroelectrics; lead zirconate titanate; PZT; doping; defect structure; valence state; site of incorporation; charge compensation; internal bias fields; aging; fatigue; EPR

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The defect structure of aliovalent transition-metal and rare-earth functional centers in ferroelectric perovskite oxides is characterized by means of multifrequency electron paramagnetic resonance spectroscopy, assisted by density-functional theory calculations. The review is mainly focused on lead zirconate titanate (Pb[ZrxTi1- x]O-3, PZT) compounds. However, where available also results on ferroelectric 'lead-free' compounds are discussed. The results include the formation of charged (Fe'(Zr,Ti) - V-O center dot center dot)center dot defect dipoles, causing internal bias fields, multivalence manganese centers, acceptor-type copper functional centers creating isolated oxygen vacancies that promote ionic conductivity, as well as Gd-Pb center dot Pb donor-type centers. Moreover, the impact of the defect structure on macroscopic material properties is discussed.

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