期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 46, 期 9A, 页码 5782-5784出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.46.5782
关键词
ultraviolet (UV); laser diode; GaN; AlGaN; hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO)
We have succeeded in fabricating ultraviolet (UV) GaN/AlGaN laser diodes without any crack generation on a whole 2-in. sapphire substrate using a hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. The UV laser diodes lased in the peak wavelength range from 355.4 to 361.6 nm under a pulsed current operation at room temperature. We have also investigated both parameters, material gain and optical-internal loss in GaN/AlGaN multiple quantum wells (MQWs). The actual threshold currents of the UV laser diodes were practically in agreement with the estimated threshold cur-rent from these parameters. This layer structure is one of the solutions for the purpose of high-yield production of UV photonic devices.
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