Growth of silicon nanowires by nanometer-sized tip manipulation

Polycrystalline silicon (Si) nanowires were produced inside a transmission electron microscope by manipulating a nanometer-sized Si tip on a Si plate, both covered with natural oxide layers in a high vacuum at room temperature. The growth procedure of Si nanowires was observed in situ by transmission electron microscopy, and their electric conductivity and mechanical strength were simultaneously measured with the functions of scanning probe microscopy. It was found that the growth was caused by the migration of atoms owing to the application of a bias voltage of 10V. The Si nanowires showed electric conduction with a current density ranging from 10(9) to 10(11) A/m(2).