期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 54, 期 9, 页码 2100-2115出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2007.902857
关键词
algorithm; computational electronics; contact resistance; gate leakage; Green's function; modeling; MOSFETs; nanoelectronics; nanomaterials; nanotechnology; non equilibrium quantum transport; parallel processing; phonons; quantum effects; quantum theory; review; scattering; semiconductors; silicon; simulator; software
In this paper, we review our recent work using the nonequilibrium Green's function method to model nanotransistors. After presenting a motivation for the need of quantum mechanical modeling, an account of the equations and implementation is given for both 1-D and 2-D modeling. Examples are given to highlight the use of the developed models. Finally, possible future directions in quantum mechanical modeling of transport in nanotransistors are highlighted along with computational challenges.
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