期刊
SURFACE SCIENCE
卷 601, 期 17, 页码 3605-3610出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2007.07.002
关键词
indium antimonide; InSb; scanning tunneling microscopy; surface electronic phenomena; surface structure
InSb(0 0 1) surface prepared by ion sputtering and thermal annealing has been studied in the temperature range from 77 K up to 300 K using scanning tunneling microscopy (STM). At 300 K the surface is c(8 x 2) reconstructed as indicated by low energy electron diffraction and SUM images. and its structure appears to be consistent with the zeta-model recently proposed for this surface. Upon lowering of the temperature below 180 K a new phase appears on the surface. This phase is characterized by the surface structure period doubling along [1 1 0]. lowering the surface symmetry from c2mm to p2, and appearance of structural domains. Possible origins of the new phase are discussed. (c) 2007 Published by Elsevier B.V.
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