期刊
MICROELECTRONICS RELIABILITY
卷 47, 期 9-11, 页码 1812-1817出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2007.07.100
关键词
-
The paper investigates the dependence of charging process on the dielectric charging of radiation induced defects in Si3N4 and SiO2 dielectric films, which are used in RF-MEMS switches. The radiation has been performed with 5 MeV alpha particles. The assessment has been carried out in Metal-Insulator-Metal capacitors with the thermally stimulated depolarization currents and discharge current transient methods. This allowed monitoring the defects introduction as a function of radiation fluence. The defects electrical characteristics that are the activation energy and corresponding depolarization time constant were determined from the evolution of the thermally stimulated current spectra and the transient response of discharge currents at different temperatures. (C) 2007 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据