期刊
SOLID-STATE ELECTRONICS
卷 51, 期 9, 页码 1153-1160出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2007.07.019
关键词
SOI; silicon-on-insulator; MOSFET
Trigate SOI transistors have been modeled using the Poisson and Schrodinger equations. In devices with a large enough cross section, inversion channels form at the Si/SiO2 interfaces, but in devices with a small section, volume inversion is clearly visible. A transition between a one-dimensional density of states to a two-dimensional density of states is observed when the height of the fin is increased. Current oscillations are experimentally observed when the gate voltage is increased. These are due to a quantum-wire effect in which electron mobility is affected by intersubband scattering. (c) 2007 Elsevier Ltd. All rights reserved.
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