Carrier capture in InGaAsSb/InAs/InGaSb type-II laser heterostructures

Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures were performed. Capture of electrons and holes was studied separately in specially designed and grown laser heterostructures with QWs only for electrons or only for holes. The difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies. (c) 2007 American Institute of Physics.