The authors report the fabrication of high performance thin film transistors (TFTs) with an amorphous indium gallium zinc oxide (a-IGZO) channel, which was deposited by cosputtering using a dual IGZO and indium zinc oxide (IZO) target. The effect of the indium content on the device performance of the a-IGZO TFTs was investigated. At a relatively low IZO power of 400 W, the field-effect mobility (mu(FE)) and subthreshold gate swing (S) of the a-IGZO TFTs were dramatically improved to 19.3 cm(2)/V s and 0.35 V/decade, respectively, compared to those (11.2 cm(2)/V s and 1.11 V/decade) for the TFTs with the a-IGZO channel (reference sample) prepared using only the IGZO target. The enhancement in the subthreshold I-DS-V-GS characteristics at an IZO power of 400 W compared to those of the reference sample was attributed to the reduction of the interface trap density rather than the reduction of the bulk defects of the a-IGZO channel.
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