The authors discuss time and temperature dependences of the shift in threshold voltage (Delta V-T) of nanocrystalline silicon (nc-Si) thin film transistors (TFTs) stressed at constant drain currents. In contrast to the behavior of the hydrogenated amorphous silicon (a-Si:H) counterpart, a weak temperature dependence of Delta V-T was observed. The results follow the charge trapping model and the predicted stretched-exponential time dependence that saturates at prolonged stress times. In addition, Delta V-T does not fit into the thermalization energy concept that was developed based on the defect state creation model for a-Si:H TFTs. The results indicate absence of defect state creation in nc-Si TFTs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据