期刊
VACUUM
卷 82, 期 1, 页码 9-14出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2006.12.010
关键词
ZnO : Ga; transparent conductive oxide films; magnetron sputtering; electrical and optical properties
Ga-doped zinc oxide (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. The influence of substrate temperature on the structural, electrical, and optical properties of ZnO:Ga films was investigated. The X-ray diffraction (XRD) studies show that higher temperature helps to promote Ga substitution more easily. The film deposited at 350 degrees C has the optimal crystal quality. The morphology of the films is strongly related to the substrate temperature. The film deposited is dense and flat with a columnar structure in the cross-section morphology. The transmittance of the ZnO:Ga thin films is over 90%. The lowest resistivity of the ZnO:Ga film is 4.48 x 10(-4) Omega cm, for a film which was deposited at the substrate temperature of 300 degrees C. (C) 2007 Elsevier Ltd. All rights reserved.
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