期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 40, 期 18, 页码 5537-5540出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/40/18/004
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We present experimental and theoretical investigations of the bias-dependent spectral shift of the photoresponse in InAs/InxGa1-x As quantum-dots-in-a-well structures. Experimental results show that the wavelength response of the transition from the quantum dot ground state to quantum well states can be Stark-shifted by similar to 15% by changing the applied bias between - 1V and + 1V. A theoretical model based on the 8-band k . p method fits our experimental data well using realistic dot parameters. We also demonstrate an increase in the operating wavelength and a reduced bias-dependent spectral shift for samples containing dots formed by depositing less InAs during growth.
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