We have manufactured organic field-effect transistors by using shadow masks that are patterned by a screen printing system. The 50-nm-thick pentacene layer is sublimed as a channel in the vacuum system through the shadow mask on the base film with a multilayer patterned by ink-jet. After the deposition of the pentacene layer, the shadow mask is peeled off from the base film without any mechanical damages to the lower structures. The mobility in the saturation regime is 0.4 cm(2)/V s and the on-off ratio exceeds 10(5). (C) 2007 American Institute of Physics.
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