Antiferromagnetic domain configurations in patterned LaFeO3 thin films

Photoemission electron microscopy was employed to study the antiferromagnetic domain structure in patterned LaFeO3 thin films. No influence of the patterning was observed and, using forward scattered electron scanning electron microscopy, a one-to-one correlation of the crystallographic domain structure with the antiferromagnetic domains was found. We deduce that the antiferromagnetic domain structure of thin LaFeO3 films is determined by the crystallographic domains and this explains why it is not influenced by patterning. Determining the origin of antiferromagnetic domains provides an important step in the understanding of patterned exchange bias systems where antiferromagnetic films play a primary role.