期刊
PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS
卷 5, 期 2-3, 页码 86-90出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.photonics.2007.07.005
关键词
GaN; InGaN; MOCVD; light-emitting diode (LED); nanoparticle; surface plasmon; silver; Fourier modal method; plasmon
We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal-organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement. (C) 2007 Published by Elsevier B.V.
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