Novel organic inverters with dual-gate pentacene thin-film transistor

We report on the fabrication and characterization of dual-gate pentacene organic thin-film transistors (OTFTs) with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al2O3 as a bottom-gate dielectric and PEALD 200 nm thick Al2O3 as a top-gate dielectric. The V-th of dual-gate OTFT has changed systematically with the application of voltage bias to top-gate electrode. When voltage bias from - 10 V to 10 V is applied to top gate, Vth changes from 1.95 V to -9.8 V. Two novel types of the zero drive load logic inverter with dual-gate structure have been proposed and fabricated using PEALD Al2O3 gate dielectrics. Because the variation of V-th due to chemical degradation and the spatial variation of V-th are inherent in OTFTs, the compensation technology by dual-gate structure can be essential to OTFT applications. (C) 2007 Elsevier B.V. All rights reserved.