期刊
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
卷 56, 期 5, 页码 1839-1844出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIM.2007.903647
关键词
conductivity measurement; contactless measurements; GaAs; resistivity mapping; semiconductor-material measurements; SiC; silicon
Complementary single- and split-post dielectricresonator techniques were used for contactless absolute resistivity measurements of semiconductor wafers and for onwafer resistivity mapping in the range of 10(-5) to 10(5) Omega center dot cm., Uncertainties of the resistivity measurements employing both techniques are in the range of 2%-4%. Permittivities of high-resistivity semiconductors were measured with uncertainties of approximately 0.5%. Several Silicon, GaAs, and SiC wafers were tested at room and at elevating temperatures, showing excellent repeatability of measurements.
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