期刊
APPLIED PHYSICS LETTERS
卷 91, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2785946
关键词
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资金
- Engineering and Physical Sciences Research Council [EP/C010434/1] Funding Source: researchfish
The effects of x-ray irradiation on the electrical performance of organic thin film transistors (OTFTs) have been examined up to equivalent lifetime doses for medical digital x-ray imaging backplanes. Transistor performance metrics have been assessed before and after exposures up to 500 Gy for bottom-gate, bottom-contact OTFTs of p-channel polytriarylamine and polyfluorene semiconductors. There is no discernible degradation in device performance for either material and no indication of the creation of additional trap states. In situ measurements indicate that x-ray exposure tends to reverse undesirable shifts in the threshold voltage due to prolonged atmospheric exposure and bias stress.
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