期刊
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
卷 76, 期 10, 页码 -出版社
PHYSICAL SOC JAPAN
DOI: 10.1143/JPSJ.76.103710
关键词
SiC; superconductivity; wide-gap semiconductor; heavily boron-doped
We report superconductivity in heavily boron-doped bulk silicon carbide related to the diamond structure. The compound exhibits zero resistivity and diamagnetic susceptibility below a critical temperature T-c of similar to 1.4K, and an effective boron doping concentration higher than 10(21) cm(-3). We present the H-T phase diagram of this new superconducting compound determined from AC susceptibility. In finite DC magnetic fields a clear hysteresis was observed between cooling and subsequent warming runs. This indicates, in contrast with the type-II superconductivity in boron-doped diamond and silicon, that a type-I superconductivity with a critical field H-c(0) of about 100 Oe is realized in boron-doped SiC. Moreover, the specific-heat shows a clear jump at Tc, demonstrating bulk nature of the superconductivity.
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