4.7 Article

The origin of high-mismatch orientation relationships for ultra-thin oxide overgrowths

期刊

ACTA MATERIALIA
卷 55, 期 17, 页码 6027-6037

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PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2007.07.011

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crystallographic orientation relationship; oxidation; thin films; thermodynamics; high-resolution transmission electron microscopy(HR-TEM)

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A crystallographic orientation relationship (COR) of unusually high lattice mismatch (> 15%) between an Al {1 0 0} substrate and its ultra-thin (<1 nm) oxide overgrowth is reported. This striking observation is in contrast with the general assumption that a COR with the lowest mismatch is preferred. However, as shown by thermodynamic model calculations, despite the relatively large energy contributions from residual strain and misfit dislocations, the high-mismatch overgrowth can be stabilized by a relatively low surface energy and a relatively high density of metal-oxygen bonds across the interface. (C) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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