3.8 Article

The dislocation bias

期刊

JOURNAL OF COMPUTER-AIDED MATERIALS DESIGN
卷 14, 期 3, 页码 403-417

出版社

SPRINGER
DOI: 10.1007/s10820-007-9051-3

关键词

radiation effects; dislocations; point defects; diffusion; void swelling

向作者/读者索取更多资源

Bias factors for dislocations quantify the preferential diffusion of self-interstitials relative to the diffusion of vacancies to dislocations. These parameters are essential for rate theory computer codes that model nucleation and growth of voids, helium bubbles, dislocation loops, and the evolution of microstructures in materials subject to high dose irradiations. Compact formulae for these factors are derived and the accuracy of several approximations is explored.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

3.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据