期刊
JOURNAL OF COMPUTER-AIDED MATERIALS DESIGN
卷 14, 期 3, 页码 403-417出版社
SPRINGER
DOI: 10.1007/s10820-007-9051-3
关键词
radiation effects; dislocations; point defects; diffusion; void swelling
Bias factors for dislocations quantify the preferential diffusion of self-interstitials relative to the diffusion of vacancies to dislocations. These parameters are essential for rate theory computer codes that model nucleation and growth of voids, helium bubbles, dislocation loops, and the evolution of microstructures in materials subject to high dose irradiations. Compact formulae for these factors are derived and the accuracy of several approximations is explored.
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