Effect of microwave annealing temperatures on lead zirconate titanate thin films

Lead zirconate titanate (Pb-1.1( Zr0.52Ti0.48)O-3) thin films of thickness 260 nm on Pt/Ti/SiO2/Si substrates were densified by 2.45 GHz microwave annealing. The PZT thin films were annealed at various annealing temperatures from 400 to 700 degrees C for 30 min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phase at 450 degrees C and the film was fully crystallized. The secondary ( again pyrochlore) phase was observed in the PZT thin films, which were annealed above 550 degrees C. The surface morphologies were changed above 550 degrees C of the PZT thin films due to the secondary phase. Higher dielectric constant (epsilon(r)) and lower dielectric loss coercive field (E-c) were achieved for the 450 degrees C film than for the other annealed films.