Fabrication and electrical, photosensitive properties of p-poly(9,9-diethylfluorene)/n-silicon nanowire heterojunction

P-poly (9, 9-diethylfluorene)/n-silicon nanowire (SiNW) heterojunctions were prepared by spin coating p-type conductive organic polymer on as-prepared n-SiNWs, which were fabricated by electroless metal deposition method. This hybrid nanowire p-n heterojunction shows good rectifying behavior with turn-on voltage of about 1 V at room temperature. Temperature-dependent current-voltage properties in the range of 253-413 K were investigated and they follow the standard p-n heterojunction electron transport mechanism. The hybrid nanowire heterojunction shows good photovoltaic properties and good sensitivity toward visible light, and a responsivity of 3.23 mA/W under a reverse bias of 10 V was obtained. These results present potential applications in the future nanoelectronic and photonic devices based on organic and inorganic p-n heterojunction arrays. (C) 2007 American Institute of Physics.