期刊
THIN SOLID FILMS
卷 515, 期 24, 页码 8479-8483出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2007.03.095
关键词
ZnO; al-doping; optical properties; AFM; magnetron sputtering; XPS; TEM; a-Si : H crystallization
Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray pbotoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-SM substrate results in crystallization of the a-Si:H layer independently of Al doping. (c) 2007 Elsevier B.V. All rights reserved.
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