Temperature effect on the substrate selectivity of carbon nanotube growth in floating chemical vapor deposition

An easy approach to control the carbon nanotube ( CNT) array selectivity on Si/ SiO2 in the floating chemical vapor deposition ( CVD) method by adjusting the operation temperature is demonstrated. Aligned CNTs can be obtained directly on Si using a standard procedure at a relatively low temperature. After analyzing the temperature influence on different substrates, an attempt to grow an ultra- long CNT forest at the optimized temperature and without any feedstock diffusion limitation is discussed.