期刊
ADVANCED MATERIALS
卷 19, 期 20, 页码 3333-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200700083
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The role of dislocations in stable p-type phosphorus-doped ZnO epitaxial films is investigated. It is shown that good p-type conductivity is always associated with a considerable increase in the density of dislocations, which can aid the formation of shallow complex acceptors and provide sinks for native donors.
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