The mechanism study on transport properties in perovskite oxide p-n junctions

The drift-diffusion mechanism, the interband Zener tunneling theory, and the trap assisted tunneling model are combined to reveal the transport properties in a multicorrelated system of the p-La0.9Sr0.1MnO3/n-SrNb0.01Ti0.99O3 junction with various temperatures. The good agreement between the calculated and measured I-V curves reveal that the drift-diffusion mechanism dominates the transport process with forward bias, and the interband Zener tunneling plays an important role for the carrier transport with high reverse bias. In the low reverse bias, the I-V characteristic of oxide device is mainly attributed to the trap assisted tunneling process caused by the oxygen vacancy induced states. (C) 2007 American Institute of Physics.