4.1 Article

Synchrony in silicon: The gamma rhythm

期刊

IEEE TRANSACTIONS ON NEURAL NETWORKS
卷 18, 期 6, 页码 1815-1825

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNN.2007.900238

关键词

binding; conductance-based neuron circuit; delay model of synchrony; inhibitory interneuron; neuromorphic engineering; shunting inhibition; synaptic rise time

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In this paper, we present a network of silicon interneuron that synchronize in the gamma frequency range (20-80 Hz). The gamma rhythm strongly influences neuronal spike timing within many brain regions, potentially playing a crucial role in computation. Yet it has largely been ignored in neuromorphic systems, which use mixed analog and digital circuits to model neurobiology in silicon. Our neurons synchronize by using shunting inhibition (conductance based) with a synaptic rise time. Synaptic rise time promotes synchrony by delaying the effect of inhibition, providing an opportune period for interneurons to spike together. Shunting inhibition, through its voltage dependence, inhibits interneurons that spike out of phase more strongly (delaying the spike further), pushing them into phase (in the next cycle). We characterize the interneuron, which consists of soma (cell body) and synapse circuits, fabricated in a 0.25-mu m complementary metal-oxide-semiconductor (CMOS). Further, we show that synchronized interneurons (population of 256) spike with a period that is proportional to the synaptic rise time. We use these interneurons to entrain model excitatory principal neurons and to implement a form of object binding.

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