期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 6, 期 6, 页码 595-600出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2007.907857
关键词
FESEM; nanowires; UV photodetector; ZnO
Vertical well-aligned and crabwise ZnO nanowires were prepared on patterned ZnO:Ga/glass substrates by reactive evaporation method under different growth conditions. The average length and diameter of vertical well-aligned ZnO nanowires were around 1 mu m and 50-100 nm, respectively. In contrast, the average length and diameter of crabwise ZnO nanowires were around 5 mu m and 30 nm, respectively. Upon illumination with UV light (lambda = 362 nm), it was found that measured responsivities were 0.015 and 0.03 A/W for the crabwise ZnO nanowire photodetector biased at 10 and 15 V, respectively. Furthermore, a rejection ratio of approximately 10 was obtained for the crabwise ZnO nanowire photodetector with an applied bias of 10 V.
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