High-performance logic circuits constructed on single CdS nanowires

A high-performance NOT logic gate (inverter) was constructed by combining two identical n-channel metal-semiconductor field-effect transistors (MESFETs) made on a single US nanowire (NW). The inverter has a voltage gain as high as 83, which is the highest reported so far for inverters made on one-dimensional nanomaterials. The MESFETs used in the inverter circuit show excellent transistor performance, such as high on/off current ratio (similar to 10(7)), low threshold voltage (similar to-0.4 V), and low subthreshold swing (similar to 60 mV/dec). With the assembly of three identical NW MESFETs, NOR and NAND gates have been constructed.