期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 6, 期 6, 页码 688-695出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2007.907400
关键词
carbon nanofiber; interconnects; via
We present temperature-dependent electrical characteristics of vertically aligned carbon nanofiber (CNF) arrays for on-chip interconnect applications. The study consists of three parts. First, the electron transport mechanisms in these structures are investigated using I-V measurements over a broad temperature range (similar to 4.4 K to 350 K). The measured resistivity in CNF arrays is modeled based on known graphite two-dimensional hopping electron conduction mechanism. The model is used because of the disordered graphite structure observed during high-resolution scanning transmission electron microscopy (STEM) of the CNF and CNF-metal interface. Second, electrical reliability measurements are performed at different temperatures to demonstrate the robust nature of CNFs for interconnect applications. Finally, some guidance in catalyst material selection is presented to improve the nanostructure of CNFs, making the morphology similar to multiwall nanotubes.
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