Photoluminescence study of p-type ZnO:Sb prepared by thermal oxidation of the Zn-Sb starting material

We have investigated photoluminescence (PL) from Sb-doped p-type ZnO films obtained by thermal oxidation of the Zn-Sb starting material. Very well resolved PL spectra were obtained from samples, with the hole concentration above 1x10(17) cm(-3). Acceptor binding energy is determined to be 137 meV from free electron to acceptor transitions. The binding energy between the acceptor and the exciton obtained from the analysis of the acceptor bound excitonic PL transitions measured as a function of temperature is 12-15 meV.