We fabricated Fe(3-x)M(x)O(4) (M=Mn,Zn) thin film by pulsed laser deposition technique and investigated their electronic structure by hard x-ray photoemission spectroscopy (HX-PES) and x-ray magnetic circular dichroism (XMCD). HX-PES and XMCD revealed that the solid solution system of Fe(3-x)M(x)O(4) (M=Mn,Zn) is the best candidate for tunable ferromagnetic oxide semiconductor judging from systematic change of Fe, Mn core-level spectra, and valence band spectra by substitution. We present a model to explain modulation of electric and magnetic properties and electronic structure evolution caused by strongly correlated electron.
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