Formation of single-crystalline CuS nanoplates vertically standing on flat substrate

Single-crystalline CuS hexagonal nanoplates have been prepared through a facile chemical vapor reaction (CVR) process in which sulfur vapor reacted with copper films in a vacuum chamber at about 450 degrees C for about 7 h. The parent copper films were obtained on a silicon wafer or glass slide through vacuum evaporation of metal copper. The effects of film thickness, reaction time, and temperature on CuS nanoplates growth were investigated, and the products were characterized by means of X-ray diffraction (XRD), element analysis, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected area electron diffraction (SAED). The CuS hexagonal nanoplates are single crystals with an edge length of 0.2-1.8 mu m and a thickness of 20-150 nm. Interestingly, the as-prepared CuS nanoplates are oriented in the direction perpendicular to the substrate surface with the c-axis parallel to the substrate surface. The possible formation mechanism of the CuS nanoplates has been elucidated.