期刊
ADVANCED MATERIALS
卷 19, 期 21, 页码 3692-3695出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200701478
关键词
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Two core-fluorinated perylene bisimide semiconductors have been synthesized and n-channel field effect transistors have been fabricated by vapor-deposition techniques. Charge carrier mobilities as high as 0.34 cm(2)V(-1)s(-1) and unprecedented on-to-off current ratios around 10(7) have been measured for these devices in air.
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